Semiconductor device that degrades leak current of a transistor

ABSTRACT

A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.11/758,394, filed Jun. 5, 2007, and is based upon and claims the benefitof priority from the prior Japanese Patent Application No. 2006-161469,filed on Jun. 9, 2006, the entire contents of each of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device that degradesthe leak current of a dummy transistor.

2. Background Art

Recently, digital/analog hybrid devices have become more popular, andreducing the power consumption of ICs has become an important issue. Andas the power supply voltage becomes lower, the use of transistors havinglower threshold voltages is popularized.

However, if a high voltage is applied between the source and the drainof a transistor having a low threshold voltage, a leak current on theorder of several microamperes occurs even if the transistor is turnedoff (even if the gate voltage is lowered). Such a leak current is adisadvantage of the transistors having low threshold voltages.

Furthermore, analog circuits have a problem that the circuitperformances are degraded due to process variations. Typically, in orderto suppress the degradation of the circuit performances due to processvariations, transistors used in the circuit are provided with a dummytransistor.

However, if a high voltage is applied between the source and the drainof the dummy transistor, a leak current may flow via the dummytransistor, depending on the wire connection. Thus, a measure againstthe leak current has to be taken. when the transistor is in the offstate, a switch (a low-leak-current transistor having a high thresholdvoltage, for example) is connected to the ground (or the power supply)to block the leak current. In the case where a dummy transistor isadded, the leak current can be suppressed by avoiding applying a highvoltage between the source and the drain of the dummy transistor.However, in this case, a large parasitic capacitance occurs between thesource/drain and the substrate, so that the gain and the noise figure(NF) at high frequencies are degraded.

The parasitic capacitance between the source/drain and the substrate canbe degraded by making the potential of the source or drain of the dummytransistor that is not shared with the main transistor equal to thepotential of the substrate with the gate.

However, even when the switch is in the off state, a leak current flowsbetween the power supply and the ground via the dummy transistor if apotential difference occurs between the source and the drain of the maintransistor.

As a result, there is a problem that the standby power requirementincreases in the communication system, such as a cellular phone.

As the conventional semiconductor device described above, there has beenproposed a switch circuit in which two field effect transistors of thesame conductivity type that receive a control signal at the gatesthereof are connected in series between one terminal and the otherterminal of the switch circuit, a switch element controlled by thecontrol signal is connected between the connection of the source of oneof the transistors and the drain of the other transistor and point of aconstant potential, and the potential of the source of the onetransistor and the drain of the other transistor are fixed at theconstant potential when the switch circuit is in the off state (seeJapanese Patent Laid-Open Publication No. 2005-268895). In this way, theswitch circuit, which uses a low-threshold voltage field effecttransistor in order to degrade the on resistance, suppresses the leakcurrent.

However, the patent literature described above does not refer to anydummy transistor for reducing degradation of the circuit performancesdue to process variations, and the conventional semiconductor devicedescribed therein is not intended to suppress the leak current of thedummy transistor.

As described above, the prior art has a problem that the leak currentcannot be degraded while suppressing degradation in gain and noisefigure at high frequencies of a dummy transistor that degrades thecircuit performances due to process variations of a semiconductordevice.

SUMMARY OF THE INVENTION

According one aspect of the present invention, there is provided: asemiconductor device, comprising a main transistor that is afirst-conductivity-type MOS transistor and has the drain connected to afirst potential; a first switch circuit that is connected between thesource of said main transistor and a second potential; a dummytransistor that is a first-conductivity-type MOS transistor whose sourceserves also as the source of said main transistor; and a second switchcircuit that is connected between the drain of said dummy transistor andsaid first potential or said second potential.

According another aspect of the present invention, there is provided asemiconductor device, comprising: a main transistor that is afirst-conductivity-type MOS transistor and has the drain connected to afirst potential; a first switch circuit that is connected between thesource of said main transistor and a second potential; a dummytransistor that is a first-conductivity-type MOS transistor whose drainserves also as the drain of said main transistor; and a second switchcircuit that is connected between the source of said dummy transistorand said first potential or said second potential.

According still further aspect of the present invention, there isprovided a semiconductor device, comprising: a semiconductor device,comprising a main transistor that is a first-conductivity-type MOStransistor and has the drain connected to a first potential; a firstswitch circuit that is connected between the source of said maintransistor and a second potential; a first dummy transistor that is afirst-conductivity-type MOS transistor whose source serves also as thesource of said main transistor; a second dummy transistor that is afirst-conductivity-type MOS transistor whose drain serves also as thedrain of said main transistor and whose source is connected to the drainof said first dummy transistor; and a second switch circuit that isconnected between the drain of said first dummy transistor and saidfirst potential or said second potential.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to an embodiment 1 of thepresent invention;

FIG. 2 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to the embodiment 2 of thepresent invention;

FIG. 3 is a top view showing the layout of the part of the semiconductordevice surrounded by the dotted line in FIG. 2;

FIG. 4 is a cross-sectional view of the semiconductor device accordingto the embodiment 2 of the present invention taken along the line “a-a”in FIG. 3;

FIG. 5 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to the embodiment 3 of thepresent invention;

FIG. 6 is a top view showing the layout of the part of the semiconductordevice surrounded by the dotted line in FIG. 5;

FIG. 7 is a cross-sectional view of the semiconductor device accordingto the embodiment 3 of the present invention taken along the line “b-b”in FIG. 6;

FIG. 8 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to the embodiment 4 of thepresent invention;

FIG. 9 is a top view showing the layout of the part of the semiconductordevice surrounded by the dotted line in FIG. 8;

FIG. 10 is a cross-sectional view of the semiconductor device accordingto the embodiment 4 of the present invention taken along the line “c-c”in FIG. 9;

FIG. 11 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 5 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit;

FIG. 12 is a top view showing the layout of the semiconductor deviceincluding the part shown in FIG. 11;

FIG. 13 is a cross-sectional view of the semiconductor device accordingto the embodiment 5 of the present invention taken along the line “d-d”in FIG. 12;

FIG. 14 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 6 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit;

FIG. 15 is a top view showing the layout of the semiconductor deviceincluding the part shown in FIG. 14;

FIG. 16 is a cross-sectional view of the semiconductor device accordingto the embodiment 6 of the present invention taken along the line “e-e”in FIG. 15;

FIG. 17 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 7 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit;

FIG. 18 is a top view showing the layout of the semiconductor deviceincluding the part shown in FIG. 17;

FIG. 19 is a cross-sectional view of the semiconductor device accordingto the embodiment 7 of the present invention taken along the line “f-f”in FIG. 18;

FIG. 20 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 8 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit;

FIG. 21 is a top view showing the layout of the semiconductor deviceincluding the part shown in FIG. 20;

FIG. 22 is a cross-sectional view of the semiconductor device accordingto the embodiment 8 of the present invention taken along the line “g-g”in FIG. 21.

DETAILED DESCRIPTION

A semiconductor device according to an aspect of the present inventiondegrades the leak current of a dummy transistor provided to degradeprocess variations by controlling a switch circuit that turns on and offthe current flowing to the dummy transistor.

In the following, embodiments of the present invention will be describedwith reference to the drawings.

Embodiment 1

FIG. 1 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to an embodiment 1 of thepresent invention.

The following description will be made on the assumption that a firstpotential is a power supply potential, a second potential is a groundpotential, a first conductivity type is the n type, and a secondconductivity type is the p type. However, even if the conductivity typesare interchanged, the present invention can be equally applied byinverting the polarity of the circuit.

As shown in FIG. 1, a semiconductor device 100 has a main transistor 1that is a first-conductivity-type (n-type) MOS transistor having thedrain “y” connected to a power supply potential “V_(DD)”, which is afirst potential, a first switch circuit 2 that is connected between thesource “x” of the main transistor 1 and a ground potential, which is asecond potential, a first dummy transistor 3 that is an n-type MOStransistor whose source serves also as the source “x” of the maintransistor 1, a second dummy transistor 4 that is an n-type MOStransistor whose drain serves also as the drain “y” of the maintransistor 1, and a second switch circuit 5 that is connected betweenthe drain of the first dummy transistor 3 (the source of the seconddummy transistor 4) and the ground potential.

A substrate terminal “z” of the main transistor 1 is connected to asubstrate terminal of the first and second dummy transistors 3 and 4.

The drain of the first dummy transistor 3 is connected to the gatethereof and the substrate terminal thereof.

The source of the second dummy transistor 4 is connected to the gatethereof and the substrate terminal thereof.

Since the first and second dummy transistors 3 and 4 are arranged inthis way, degradation of the circuit performances of the semiconductordevice 100 due to process variations can be suppressed.

In addition, since the gate of the first dummy transistor 3 is connectedonly to the drain thereof, and the gate of the second dummy transistor 4is connected only to the source thereof as described above, theparasitic capacitance between the source/drain and the substrate isdegraded compared with the conventional dummy transistor that has thegate, the source and the drain connected to each other in order tosuppress the leak current.

Therefore, the gain and the noise figure of the semiconductor device 100at high frequencies are improved.

Now, an operation of the semiconductor device 100 configured asdescribed above will be described.

When the main transistor 1 is turned off, the first switch circuit 2 andthe second switch circuit 5 each receive a power down signal “PD” andare turned off.

Thus, when the main transistor 1 is in the off state, the first switchcircuit 2 is in the off state, so that a leak current is prevented fromflowing to the main transistor 1. In addition, when the main transistor1 is in the off state, the second switch circuit 5 is also in the offstate, so that a leak current is prevented from flowing to the first andsecond dummy transistors 3 and 4.

Thus, the semiconductor device according to this embodiment can degradethe leak current and the power consumption while suppressing degradationin gain and noise figure at high frequencies of the dummy transistorsfor reducing process variations.

Embodiment 2

With regard to the embodiment 1, there has been described aconfiguration that includes the first switch circuit for preventing aleak current from flowing to the main transistor and the second switchcircuit for preventing a leak current from flowing to the first andsecond dummy transistors. With regard to an embodiment 2, in particular,there will be described a case where the first and second switchcircuits are MOS transistors.

FIG. 2 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to the embodiment 2 of thepresent invention. FIG. 3 is a top view showing the layout of the partof the semiconductor device surrounded by the dotted line in FIG. 2.FIG. 4 is a cross-sectional view of the semiconductor device accordingto the embodiment 2 of the present invention taken along the line “a-a”in FIG. 3. In the drawings, the same reference numerals as those in theembodiment 1 denote the same elements as those in the embodiment 1.

As shown in FIG. 2, a semiconductor device 200 has a main transistor 1,a first MOS transistor 22 that is connected between the source “x” ofthe main transistor 1 and a ground potential and serves as a firstswitch circuit, a first dummy transistor 3, a second dummy transistor 4,and a second MOS transistor 25 that is connected between the drain ofthe first dummy transistor 3 (the source of the second dummy transistor4) and the ground potential and serves as a second switch circuit.

A coil 6 is connected between the main transistor 1 and a power supplypotential “V_(DD)”.

In addition, the potential of the drain “y” of the main transistor 1 isoutput as an output signal “Vout” from an output terminal 8 via acapacitor 7.

In addition, a coil 9 is connected between the source “x” of the maintransistor 1 and the drain of the first MOS transistor 22.

As shown in FIGS. 3 and 4, the main transistor 1, and the first andsecond dummy transistors 3 and 4 are formed in a p-type well 11 formedin a p-type substrate 10. A substrate terminal 11 a of the p-type well11 is connected to the gate and the drain of the first dummy transistor3 and the gate and the source of the second dummy transistor 4. The maintransistor 1 and the first and second dummy transistors 3 and 4 aresurrounded by a high-concentration-doped n-type well 12, and a substrateterminal 12 a of the n-type well 12 is connected to the power supplypotential “V_(DD)”. The substrate terminal 12 a may be connected toanother potential that is at least approximately at the same level asthe power supply potential “V_(DD)”.

The second MOS transistor 25 is formed in a p-type well 13 formed in thep-type substrate 10 with a device isolation film 14 between the p-typewell 13 and the n-type well 12. A substrate terminal 13 a of the p-typewell 13 is connected to the source of the second MOS transistor 25 andthe ground potential.

As in the embodiment 1, since the first and second dummy transistors 3and 4 are arranged in this way, degradation of the circuit performancesof the semiconductor device 200 due to process variations can besuppressed.

In addition, as in the embodiment 1, since the gate of the first dummytransistor 3 is connected to the drain thereof, and the gate of thesecond dummy transistor 4 is connected to the source thereof, theparasitic capacitance between the source/drain and the substrate isdegraded compared with the conventional dummy transistor that has thegate, the source and the drain connected to each other in order tosuppress the leak current.

Therefore, the gain and the noise figure of the semiconductor device 200at high frequencies are improved.

Now, an operation of the semiconductor device 200 configured asdescribed above will be described.

The semiconductor device 200 outputs the output signal “Vout” from theoutput terminal 8 in response to a signal “Vin” input to the gate of themain transistor 1.

When the main transistor 1 is turned off, the first MOS transistor 22and the second MOS transistor 25 each receive a power down signal “PD”and are turned off.

Thus, when the main transistor 1 is in the off state, the first MOStransistor 22 is in the off state, so that a leak current is preventedfrom flowing to the main transistor 1. In addition, when the maintransistor 1 is in the off state, the second MOS transistor 25 is alsoin the off state, so that a leak current is prevented from flowing tothe first and second dummy transistors 3 and 4.

Thus, the semiconductor device according to this embodiment can degradethe leak current and the power consumption while suppressing degradationin gain and noise figure at high frequencies of the dummy transistorsfor reducing process variations.

In this embodiment, the first and second switch circuits are eachconstituted by one MOS transistor. However, other switch devices or thelike that can block the leak current can also be used. This holds truefor the embodiments described below.

Embodiment 3

With regard to the embodiment 2, there has been described aconfiguration in which the drain of the first dummy transistor isconnected to a substrate terminal, and the source of the second dummytransistor is also connected to the substrate terminal. With regard toan embodiment 3, there will be described a configuration in whichneither the drain of the first dummy transistor, nor the source of thesecond dummy transistor are connected to substrate terminal.

FIG. 5 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to the embodiment 3 of thepresent invention. FIG. 6 is a top view showing the layout of the partof the semiconductor device surrounded by the dotted line in FIG. 5.FIG. 7 is a cross-sectional view of the semiconductor device accordingto the embodiment 3 of the present invention taken along the line “b-b”in FIG. 6. In the drawings, the same reference numerals as those in theembodiment 2 denote the same elements as those in the embodiment 2.

As shown in FIG. 5, a semiconductor device 300 has a main transistor 1,a first MOS transistor 22 that serves as a first switch circuit, a firstdummy transistor 33 that is an n-type MOS transistor whose source servesalso as the source “x” of the main transistor 1, a second dummytransistor 34 that is an n-type MOS transistor whose drain serves alsoas the drain “y” of the main transistor 1, and a second MOS transistor35 that is connected between the drain of the first dummy transistor 33(the source of the second dummy transistor 34) and the ground potentialand a ground potential and serves as a second switch circuit.

As shown in FIGS. 6 and 7, the main transistor 1, and the first andsecond dummy transistors 33 and 34 are formed in a p-type well 11 formedin a p-type substrate 10. The second MOS transistor 35 is formed in ap-type well 13 formed in the p-type substrate 10 with a device isolationfilm 14 between the p-type well 11 and the p-type well 13.

A substrate terminal 11 a of the p-type well 11 is connected to asubstrate terminal 13 a of the p-type well 13 and the source of thesecond MOS transistor 35 as well as to the ground potential.

The drain of the second MOS transistor 35 is connected to the gate andthe drain of the first dummy transistor 33 as well as the gate and thesource of the second dummy transistor 34.

As in the embodiment 1, since the first and second dummy transistors 33and 34 are arranged in this way, degradation of the circuit performancesof the semiconductor device 300 due to process variations can besuppressed.

In addition, as in the embodiment 1, since the gate of the first dummytransistor 33 is connected to the drain thereof, and the gate of thesecond dummy transistor 34 is connected to the source thereof, theparasitic capacitance between the source/drain and the substrate isdegraded compared with the conventional dummy transistor that has thegate, the source and the drain connected to each other in order tosuppress the leak current.

Therefore, the gain and the noise figure of the semiconductor device 300at high frequencies are improved.

Now, an operation of the semiconductor device 300 configured asdescribed above will be described.

The semiconductor device 300 outputs an output signal “Vout” from anoutput terminal 8 in response to a signal “Vin” input to the gate of themain transistor 1.

When the main transistor 1 is turned off, the first MOS transistor 22and the second MOS transistor 35 each receive a power down signal “PD”and are turned off.

Thus, when the main transistor 1 is in the off state, the first MOStransistor 22 is in the off state, so that a leak current is preventedfrom flowing to the main transistor 1. In addition, when the maintransistor 1 is in the off state, the second MOS transistor 35 is alsoin the off state, so that a leak current is prevented from flowing tothe first and second dummy transistors 33 and 34.

Thus, the semiconductor device according to this embodiment can degradethe leak current and the power consumption while suppressing degradationin gain and noise figure at high frequencies of the dummy transistorsfor reducing process variations.

Embodiment 4

With regard to the embodiment 3, there has been described aconfiguration in which the drain of the first dummy transistor isconnected to no substrate terminal, and the source of the second dummytransistor is also connected to no substrate terminal. With regard to anembodiment 4, there will be described a configuration in which the gatesof the first and second dummy transistors are connected to a substrateterminal.

FIG. 8 is a circuit diagram showing a configuration of essentialelements of a semiconductor device according to the embodiment 4 of thepresent invention. FIG. 9 is a top view showing the layout of the partof the semiconductor device surrounded by the dotted line in FIG. 8.FIG. 10 is a cross-sectional view of the semiconductor device accordingto the embodiment 4 of the present invention taken along the line “c-c”in FIG. 9. In the drawings, the same reference numerals as those in theembodiment 2 denote the same elements as those in the embodiment 2.

As shown in FIG. 8, a semiconductor device 400 has a main transistor 1,a first MOS transistor 22 that serves as a first switch circuit, a firstdummy transistor 43 that is an n-type MOS transistor whose source servesalso as the source “x” of the main transistor 1, a second dummytransistor 44 that is an n-type MOS transistor whose drain serves alsoas the drain “y” of the main transistor 1, and a second MOS transistor45 that is connected between the drain of the first dummy transistor 43(the source of the second dummy transistor 44) and the ground potentialand serves as a second switch circuit.

As shown in FIGS. 9 and 10, the main transistor 1, and the first andsecond dummy transistors 43 and 44 are formed in a p-type well 11 formedin a p-type substrate 10. The second MOS transistor 45 is formed in ap-type well 13 formed in the p-type substrate 10 with a device isolationfilm 14 between the p-type well 11 and the p-type well 13.

A substrate terminal 11 a of the p-type well 11 is connected to the gateof the first dummy transistor 43, the gate of the second dummytransistor 44, a substrate terminal 13 a of the p-type well 13, thesource of the second MOS transistor 45, and the ground potential.

The drain of the second MOS transistor 45 is connected to the drain ofthe first dummy transistor 43 and the source of the second dummytransistor 44.

As in the embodiment 1, since the first and second dummy transistors 43and 44 are arranged in this way, degradation of the circuitcharacteristics of the semiconductor device 400 due to processvariations can be suppressed.

In addition, since the gate of the first dummy transistor 43 isconnected to the substrate terminal 11 a, and the gate of the seconddummy transistor 44 is connected to the substrate terminal 11 a, theparasitic capacitance between the source/drain and the substrate isdegraded compared with the conventional dummy transistor that has thegate, the source and the drain connected to each other in order tosuppress the leak current.

Therefore, the gain and the noise figure of the semiconductor device 400at high frequencies are improved. Now, an operation of the semiconductordevice 400 configured as described above will be described.

The semiconductor device 400 outputs an output signal “Vout” from anoutput terminal 8 in response to a signal “Vin” input to the gate of themain transistor 1.

When the main transistor 1 is turned off, the first MOS transistor 22and the second MOS transistor 45 each receive a power down signal “PD”and are turned off.

Thus, when the main transistor 1 is in the off state, the first MOStransistor 22 is in the off state, so that a leak current is preventedfrom flowing to the main transistor 1. In addition, when the maintransistor 1 is in the off state, the second MOS transistor 45 is alsoin the off state, so that a leak current is prevented from flowing tothe first and second dummy transistors 43 and 44.

Thus, the semiconductor device according to this embodiment can degradethe leak current and the power consumption while suppressing degradationin gain and noise figure at high frequencies of the dummy transistorsfor reducing process variations.

Embodiment 5

With regard to the embodiments 1 to 4, there has been described aconfiguration that includes the first and second dummy transistors. Withregard to an embodiment 5, description will be made particularly focusedon the first dummy transistor.

FIG. 11 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 5 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit. FIG. 12 is a top viewshowing the layout of the semiconductor device including the part shownin FIG. 11. FIG. 13 is a cross-sectional view of the semiconductordevice according to the embodiment 5 of the present invention takenalong the line “d-d” in FIG. 12. In the drawings, the same referencenumerals as those in the embodiment 2 denote the same elements as thosein the embodiment 2.

As shown in FIG. 11, a semiconductor device 500 has a first dummytransistor 53 that is an n-type MOS transistor whose source serves alsoas the source “x” of a main transistor 1 and to whose gate a voltagelower than the threshold voltage is applied, and a second MOS transistor55 that is connected between the drain of the first dummy transistor 53and a ground potential and serves as a second switch circuit.

As shown in FIGS. 12 and 13, the main transistor 1 and the first dummytransistor 53 are formed in a p-type well 11 formed in a p-typesubstrate 10. A substrate terminal 11 a of the p-type well 11 isconnected to the source of the first dummy transistor 53.

The main transistor 1 and the first dummy transistor 53 are surroundedby a high-concentration-doped n-type well 12, and a substrate terminal12 a of the n-type well 12 is connected to a power supply potential“V_(DD)”.

The second MOS transistor 55 is formed in a p-type well 13 formed in thep-type substrate 10 with a device isolation film 14 between the n-typewell 12 and the p-type well 13. A substrate terminal 13 a of the p-typewell 13 is connected to the source of the second MOS transistor 55 andthe ground potential. The drain of the second MOS transistor 55 isconnected to the gate of the first dummy transistor 53.

As in the embodiments described earlier, since the first dummytransistor 53 is arranged in this way, degradation of the circuitcharacteristics of the semiconductor device 500 due to processvariations can be suppressed.

In addition, as in the embodiments described earlier, since the gate ofthe first dummy transistor 53 is connected to the drain thereof, theparasitic capacitance between the source/drain and the substrate isdegraded compared with the conventional dummy transistor that has thegate, the source and the drain connected to each other in order tosuppress the leak current.

Therefore, the gain and the noise figure of the semiconductor device 500at high frequencies are improved.

The semiconductor device 500 configured as described above operates inthe same manner as the semiconductor devices according to theembodiments described earlier.

As described above, the semiconductor device according to thisembodiment can degrade the leak current and the power consumption whilesuppressing degradation in gain and noise figure at high frequencies ofthe dummy transistor for reducing process variations.

Embodiment 6

With regard to the embodiment 5, focused on the first dummy transistor,there has been described a configuration in which an n-type MOStransistor is used as the second switch circuit. With regard to anembodiment 6, there will be described a configuration in which a p-typeMOS transistor is used as the second switch circuit.

FIG. 14 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 6 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit. FIG. 15 is a top viewshowing the layout of the semiconductor device including the part shownin FIG. 14. FIG. 16 is a cross-sectional view of the semiconductordevice according to the embodiment 6 of the present invention takenalong the line “e-e” in FIG. 15. In the drawings, the same referencenumerals as those in the embodiment 5 denote the same elements as thosein the embodiment 5.

As shown in FIG. 14, a semiconductor device 600 has a first dummytransistor 63 that is an n-type MOS transistor whose source serves alsoas the source “x” of a main transistor 1, and a second MOS transistor 65that is a p-type MOS transistor connected between the drain of the firstdummy transistor 63 and a power supply potential and serving as a secondswitch circuit.

As shown in FIGS. 15 and 16, the main transistor 1 and the first dummytransistor 63 are formed in a p-type well 11 formed in a p-typesubstrate 10. A substrate terminal 11 a of the p-type well 11 isconnected to the source of the first dummy transistor 63. As describedearlier, the gate of the first dummy transistor 63 is connected to aground potential.

The main transistor 1 and the first dummy transistor 63 are surroundedby a high-concentration-doped n-type well 12, and a substrate terminal12 a of the n-type well 12 is connected to the power supply potential“V_(DD)”.

The second MOS transistor 65 is formed in an n-type well 15 formed inthe p-type substrate 10 with a device isolation film 14 between then-type well 15 and the n-type well 12. A substrate terminal 15 a of then-type well 15 is connected to the source of the second MOS transistor65 and the power supply potential. As described earlier, the drain ofthe second MOS transistor 65 is connected to the drain of the firstdummy transistor 63.

As in the embodiments described earlier, since the first dummytransistor 63 is arranged in this way, degradation of the circuitcharacteristics of the semiconductor device 600 due to processvariations can be suppressed.

In addition, as in the embodiments described earlier, the gain and thenoise figure of the semiconductor device 600 at high frequencies areimproved.

Since the second MOS transistor 65 is a p-type MOS transistor, a signalinverted from the power down signal “PD” described above is input to thesemiconductor device 600. Except for that, the semiconductor device 600configured as described above operates in the same manner as thesemiconductor devices according to the embodiments described earlier.

As described above, the semiconductor device according to thisembodiment can degrade the leak current and the power consumption whilesuppressing degradation in gain and noise figure at high frequencies ofthe dummy transistor for reducing process variations.

Embodiment 7

With regard to the embodiment 6, there has been described aconfiguration in which a p-type MOS transistor is used as the secondswitch circuit. With regard to an embodiment 7, there will be describedanother configuration in which a p-type MOS transistor is used as thesecond switch circuit.

FIG. 17 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 7 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit. FIG. 18 is a top viewshowing the layout of the semiconductor device including the part shownin FIG. 17. FIG. 19 is a cross-sectional view of the semiconductordevice according to the embodiment 7 of the present invention takenalong the line “f-f” in FIG. 18. In the drawings, the same referencenumerals as those in the embodiment 6 denote the same elements as thosein the embodiment 6.

As shown in FIG. 17, a semiconductor device 700 has a first dummytransistor 73 that is an n-type MOS transistor whose source serves alsoas the source “x” of a main transistor 1, and a second MOS transistor 75that is a p-type MOS transistor connected between the drain of the firstdummy transistor 73 and a power supply potential and serving as a secondswitch circuit.

As shown in FIGS. 18 and 19, the main transistor 1 and the first dummytransistor 73 are formed in a p-type well 11 formed in a p-typesubstrate 10. A substrate terminal 11 a of the p-type well 11 isconnected to the gate of the first dummy transistor 73 and a groundpotential.

The second MOS transistor 75 is formed in an n-type well 15 formed inthe p-type substrate 10 with a device isolation film 14 between then-type well 15 and the p-type well 11. A substrate terminal 15 a of then-type well 15 is connected to the source of the second MOS transistor75 and a power supply potential. As described earlier, the drain of thesecond MOS transistor 75 is connected to the drain of the first dummytransistor 73.

As in the embodiments described earlier, since the first dummytransistor 73 is arranged in this way, degradation of the circuitperformances of the semiconductor device 700 due to process variationscan be suppressed.

In addition, as in the embodiments described earlier, the gain and thenoise figure of the semiconductor device 700 at high frequencies areimproved.

The semiconductor device 700 configured as described above operates inthe same manner as the semiconductor device according to the embodiment6 described earlier.

As described above, the semiconductor device according to thisembodiment can degrade the leak current and the power consumption whilesuppressing degradation in gain and noise figure at high frequencies ofthe dummy transistor for reducing process variations.

Embodiment 8

With regard to the embodiments 1 to 4, there has been described aconfiguration that includes the first and second dummy transistors. Withregard to an embodiment 8, description will be made particularly focusedon the second dummy transistor.

FIG. 20 is a circuit diagram showing a configuration of a part of asemiconductor device according to the embodiment 8 of the presentinvention that includes a first dummy transistor and a second MOStransistor serving as a second switch circuit. FIG. 21 is a top viewshowing the layout of the semiconductor device including the part shownin FIG. 20. FIG. 22 is a cross-sectional view of the semiconductordevice according to the embodiment 8 of the present invention takenalong the line “g-g” in FIG. 21. In the drawings, the same referencenumerals as those in the embodiment 4 denote the same elements as thosein the embodiment 4.

As shown in FIG. 20, a semiconductor device 800 has a second dummytransistor 84 that is an n-type MOS transistor whose drain serves alsoas the drain “y” of a main transistor 1, and a second MOS transistor 85that is a p-type MOS transistor connected between the source of thesecond dummy transistor 84 and a power supply potential and serving as asecond switch circuit.

As shown in FIGS. 21 and 22, the main transistor 1 and the second dummytransistor 84 are formed in a p-type well 11 formed in a p-typesubstrate 10. A substrate terminal 11 a of the p-type well 11 isconnected to the gate of the second dummy transistor 84 and a groundpotential.

The second MOS transistor 85 is formed in an n-type well 15 formed inthe p-type substrate 10 with a device isolation film 14 between then-type well 15 and the p-type well 11. A substrate terminal 15 a of then-type well 15 is connected to the source of the second MOS transistor85 and the power supply potential. As described earlier, the drain ofthe second MOS transistor 85 is connected to the source of the seconddummy transistor 84.

As in the embodiments described earlier, since the second dummytransistor 84 is arranged in this way, degradation of the circuitperformances of the semiconductor device 800 due to process variationscan be suppressed.

In addition, as in the embodiments described earlier, the gain and thenoise figure of the semiconductor device 800 at high frequencies areimproved.

The semiconductor device 800 configured as described above operates inthe same manner as the semiconductor device according to the embodiment6 described earlier.

As described above, the semiconductor device according to thisembodiment can degrade the leak current and the power consumption whilesuppressing degradation in gain and noise figure at high frequencies ofthe dummy transistor for reducing process variations.

If the potential of the source of the first dummy transistor is equal tothe potential of the substrate terminal as in the embodiments 2, 5 and6, the same effects and advantages can be provided even if thehigh-concentration-doped n-type well is omitted, and the main transistorand the second MOS transistor shares one substrate terminal.

1. A semiconductor device, comprising: a substrate; a first well formedin the substrate; a first transistor formed in the first well; a secondtransistor formed in the first well, adjacent to the first transistor,and having a drain that serves also as a drain of the first transistor;a third transistor formed in the first well, adjacent to the firsttransistor, and having a source that serves also as a source of thefirst transistor; a second well formed in the substrate; a fourthtransistor formed in the second well; and a passive element, wherein asource of the second transistor, a gate of the second transistor, adrain of the third transistor, a gate of the third transistor, and adrain of the fourth transistor are connected to each other, and areconnected to a first potential via the passive element, and a source ofthe fourth transistor is connected to a second potential.
 2. Thesemiconductor device according to claim 1, wherein the first well issurrounded by a third well being a high-concentration-doped well.
 3. Thesemiconductor device according to claim 1, wherein the first potentialis a power supply potential, and the second potential is a groundpotential.
 4. The semiconductor device according to claim 1, wherein aconductivity-type of the substrate and a conductivity-type of the firstwell are p-type, a conductivity-type of the second well is n-type, thefirst to third transistors are n-type MOS transistors, and the fourthtransistor is p-type MOS transistor.
 5. The semiconductor deviceaccording to claim 1, wherein the passive element is coil.